Loading...

SINGLE WITH BUILT-IN DIODE AND RESISTOR Power Field Effect Transistors (FET) 10

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NID9N05ACLT4G by Onsemi

NID9N05ACLT4G

Onsemi

NID9N05ACLT4G by Onsemi is a Power FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(ON). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating from -55 to 175 °C, it offers fast ton of 950ns and toff of 3850ns.

LOGIC LEVEL COMPATIBLE

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

52 V

9 A

9 A

.181 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.74 W

35 A

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

3850 ns

950 ns

STP70NS04ZC by STMicroelectronics

STP70NS04ZC

STMicroelectronics

STP70NS04ZC by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 80 A and a breakdown voltage of 33 V. It offers low on-resistance at 0.011 Ω and operates up to 175 °C. This versatile transistor is suitable for high-power circuits.

720 mJ

SINGLE WITH BUILT-IN DIODE AND RESISTOR

33 V

80 A

80 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

180 W

320 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NIF9N05CLT1 by Onsemi

NIF9N05CLT1

Onsemi

NIF9N05CLT1 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 52V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.125 ohm Max Drain-Source Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max temp of 150 °C, making it ideal for various power control circuits.

LOGIC LEVEL COMPATIBLE

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

52 V

2.6 A

2.6 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e0

3

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.69 W

10 A

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

NIF9N05CLT3 by Onsemi

NIF9N05CLT3

Onsemi

NIF9N05CLT3 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 52V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.125 ohm Max Drain-Source Resistance. Ideal for use in circuits requiring high power dissipation and efficient switching capabilities.

LOGIC LEVEL COMPATIBLE

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

52 V

2.6 A

2.6 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e0

3

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.69 W

10 A

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

NIF9N05CLT1G by Onsemi

NIF9N05CLT1G

Onsemi

NIF9N05CLT1G by Onsemi is a Power FET with 52V DS Breakdown Voltage, 10A IDM, and 0.125 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. The package is RECTANGULAR with GULL WING terminals, suitable for ENHANCEMENT MODE operation at up to 150 °C.

LOGIC LEVEL COMPATIBLE

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

52 V

2.6 A

2.6 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e3

3

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.69 W

10 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NIF9N05CLT3G by Onsemi

NIF9N05CLT3G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.69 W; Avalanche Energy Rating (EAS): 110 mJ; Package Style (Meter): SMALL OUTLINE;

LOGIC LEVEL COMPATIBLE

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

52 V

2.6 A

2.6 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e3

3

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.69 W

10 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NID9N05BCLT4G by Onsemi

NID9N05BCLT4G

Onsemi

NID9N05BCLT4G by Onsemi is a single N-channel FET with built-in diode and resistor, ideal for switching applications. It features a min DS breakdown voltage of 52V, max pulsed drain current of 35A, and max operating temperature of 175 °C. This MOSFET has a package style of small outline and terminal finish of matte tin, making it suitable for high-power applications.

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

52 V

9 A

9 A

.181 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.74 W

35 A

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

3850 ns

950 ns

DMP1081UCB4-7 by Diodes Incorporated

DMP1081UCB4-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.59 W; Maximum Drain-Source On Resistance: .13 ohm; Peak Reflow Temperature (C): 260;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

12 V

3 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

90 pF

S-PBGA-B4

e1

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

1.59 W

20 A

YES

TIN SILVER COPPER

BALL

BOTTOM

SWITCHING

SILICON

DMP1008UCA9-7 by Diodes Incorporated

DMP1008UCA9-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: SQUARE;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

8 V

16 A

16 A

.0091 ohm

METAL-OXIDE SEMICONDUCTOR

164 pF

S-PBGA-B9

e4

1

1

9

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

2.2 W

80 A

YES

COPPER NICKEL GOLD

BALL

BOTTOM

SWITCHING

SILICON

DMP2541UCP9-7 by Diodes Incorporated

DMP2541UCP9-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.67 W; No. of Terminals: 9; Maximum Pulsed Drain Current (IDM): 35 A;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

25 V

3.8 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

S-XBCC-N9

e2

1

9

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

P-CHANNEL

1.67 W

35 A

YES

TIN SILVER

NO LEAD

BOTTOM

SWITCHING

SILICON