Loading...

Nte Electronics Power Bipolar Junction Transistors (BJT) 8

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTE2322 by Nte Electronics

NTE2322

Nte Electronics

NTE2322 by Nte Electronics is a PNP BJT with 4 elements, ideal for amplifier applications. Features include hFE of 30, VCE of 40V, and fT of 200MHz. The package style is in-line with 14 terminals in a rectangular shape for through-hole mounting.

.6 A

40 V

SEPARATE, 4 ELEMENTS

30

R-PDIP-T14

4

14

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

Not Qualified

NO

THROUGH-HOLE

DUAL

AMPLIFIER

SILICON

200 MHz

NTE378 by Nte Electronics

NTE378

Nte Electronics

NTE378 by Nte Electronics is a PNP BJT transistor with 80V VCE, 10A IC, and 50W power dissipation. Ideal for switching applications due to its high hFE of 40 and fT of 40MHz. The package style is flange mount with through-hole terminals.

COLLECTOR

10 A

80 V

SINGLE

40

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

50 W

50 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

40 MHz

NTE2325 by Nte Electronics

NTE2325

Nte Electronics

NTE2325 by Nte Electronics is a NPN BJT transistor with 800V max collector-emitter voltage, 3A max collector current, and 50W max power dissipation. Ideal for switching applications due to its single configuration and high transition frequency of 15MHz. Package style is flange mount with through-hole terminals.

COLLECTOR

3 A

800 V

SINGLE

8

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

50 W

50 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

15 MHz

NTE196 by Nte Electronics

NTE196

Nte Electronics

NTE196 by Nte Electronics is a NPN BJT transistor with 50W power dissipation, 70V max collector-emitter voltage, and 7A max collector current. Ideal for switching applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.

COLLECTOR

7 A

70 V

SINGLE

2.3

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

50 W

50 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

4 MHz

NTE2349 by Nte Electronics

NTE2349

Nte Electronics

NTE2349 by Nte Electronics is a NPN Power BJT with 300W power dissipation, 120V max collector-emitter voltage, and 50A max collector current. Ideal for high-power applications requiring Darlington configuration with built-in diode and resistor in a round package shape.

COLLECTOR

50 A

120 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

400

TO-3

O-MBFM-P2

1

2

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

NPN

300 W

300 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

SILICON

NTE243 by Nte Electronics

NTE243

Nte Electronics

NTE243 by Nte Electronics is a NPN BJT with Darlington configuration, ideal for amplifier applications. With max power dissipation of 100W (abs) and 150W (ambient), it offers hFE of min 100. Featuring VCE of 80V and IC of 8A, this silicon transistor has a round package shape for flange mount.

COLLECTOR

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-3

O-MBFM-P2

1

2

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

NPN

150 W

100 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

AMPLIFIER

SILICON

NTE247 by Nte Electronics

NTE247

Nte Electronics

NTE247 by Nte Electronics is a NPN BJT with Darlington configuration, ideal for amplifier applications. With 150W max power dissipation and 100V max collector-emitter voltage, it offers high performance. Featuring built-in diode and resistor, this transistor has 12A max collector current.

COLLECTOR

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-3

O-MBFM-P2

1

2

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

NPN

150 W

150 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

AMPLIFIER

SILICON

NTE248 by Nte Electronics

NTE248

Nte Electronics

NTE248 by Nte Electronics is a PNP BJT with 150W power dissipation, 100V max collector-emitter voltage, and 12A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with round shape and metal body material.

COLLECTOR

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-3

O-MBFM-P2

1

2

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

PNP

150 W

150 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

AMPLIFIER

SILICON