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NXP Semiconductors Power Bipolar Junction Transistors (BJT) 8

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BST15,115 by NXP Semiconductors

BST15,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 15 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .2 A;

COLLECTOR

.2 A

200 V

SINGLE

30

R-PSSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1 W

Not Qualified

Other Transistors

YES

TIN

FLAT

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

15 MHz

BST16,115 by NXP Semiconductors

BST16,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 15 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .2 A;

COLLECTOR

.2 A

300 V

SINGLE

30

R-PSSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1 W

Not Qualified

Other Transistors

YES

TIN

FLAT

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

15 MHz

BUT11AI,127 by NXP Semiconductors

BUT11AI,127

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 5 A; Maximum Power Dissipation Ambient: 100 W;

COLLECTOR

5 A

450 V

SINGLE

14

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4800 ns

1000 ns

1.5 V

BUT11APX,127 by NXP Semiconductors

BUT11APX,127

NXP Semiconductors

NXP Semiconductors' BUT11APX,127 is a NPN BJT transistor with 450V max collector-emitter voltage and 5A max collector current. It has a 32W power dissipation for switching applications at up to 150°C operating temperature. The package is rectangular with through-hole terminals in plastic/epoxy material.

ISOLATED

5 A

450 V

SINGLE

14

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

32 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUT11APX-1200,127 by NXP Semiconductors

BUT11APX-1200,127

NXP Semiconductors

NXP Semiconductors' BUT11APX-1200,127 is a NPN BJT transistor with 550V VCE, 6A IC, and 32W Ptot. Ideal for switching applications in power electronics due to its high voltage and current ratings. Package style is flange mount with through-hole terminals for easy installation.

ISOLATED

6 A

550 V

SINGLE

20

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

32 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUT12AI,127 by NXP Semiconductors

BUT12AI,127

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;

COLLECTOR

8 A

450 V

SINGLE

14

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

110 W

110 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4800 ns

1000 ns

1.5 V

BUT12AX,127 by NXP Semiconductors

BUT12AX,127

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 23 W; Maximum Collector Current (IC): 8 A; Terminal Form: THROUGH-HOLE;

ISOLATED

8 A

450 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

23 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHE13005X,127 by NXP Semiconductors

PHE13005X,127

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 26 W; Maximum Collector Current (IC): 4 A; Transistor Application: SWITCHING;

ISOLATED

4 A

400 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

26 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON