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60 MHz Power Bipolar Junction Transistors (BJT) 5

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FZT560QTC by Diodes Incorporated

FZT560QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .15 A; Maximum Collector-Emitter Voltage: 500 V;

COLLECTOR

.15 A

500 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

60 MHz

SBCP68T1G by Onsemi

SBCP68T1G

Onsemi

SBCP68T1G by Onsemi is a NPN BJT transistor with VCEsat of 0.5V, hFE of 60, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and small outline package style. Operating temperature range from -65 to 150°C makes it suitable for various environments.

COLLECTOR

1 A

20 V

SINGLE

60

TO-261

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

60 MHz

.5 V

2N5038G by Onsemi

2N5038G

Onsemi

2N5038G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 90V, max. operating temp. of 200°C, and max. power dissipation of 140W. Ideal for switching applications due to its single configuration and high collector current capability up to 20A at a min DC current gain of 20 (hFE).

COLLECTOR

20 A

90 V

SINGLE

20

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

140 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

60 MHz

BF720T3G by Onsemi

BF720T3G

Onsemi

BF720T3G by Onsemi is a NPN BJT with 300V VCEO, 0.1A IC, and 60MHz fT. Ideal for power applications, it has a max power dissipation of 1.5W in a small outline package suitable for surface mount technology.

COLLECTOR

.1 A

300 V

SINGLE

50

TO-261AA

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

60 MHz

ZXTP01500BGQTA by Diodes Incorporated

ZXTP01500BGQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 80;

HIGH RELIABILITY

COLLECTOR

.15 A

500 V

SINGLE

80

R-PDSO-G4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

60 MHz