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15 MHz Power Bipolar Junction Transistors (BJT) 5

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTE2325 by Nte Electronics

NTE2325

Nte Electronics

NTE2325 by Nte Electronics is a NPN BJT transistor with 800V max collector-emitter voltage, 3A max collector current, and 50W max power dissipation. Ideal for switching applications due to its single configuration and high transition frequency of 15MHz. Package style is flange mount with through-hole terminals.

COLLECTOR

3 A

800 V

SINGLE

8

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

50 W

50 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

15 MHz

BST15,115 by NXP Semiconductors

BST15,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 15 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .2 A;

COLLECTOR

.2 A

200 V

SINGLE

30

R-PSSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1 W

Not Qualified

Other Transistors

YES

TIN

FLAT

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

15 MHz

BST16,115 by NXP Semiconductors

BST16,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 15 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .2 A;

COLLECTOR

.2 A

300 V

SINGLE

30

R-PSSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1 W

Not Qualified

Other Transistors

YES

TIN

FLAT

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

15 MHz

MJE3439G by Onsemi

MJE3439G

Onsemi

MJE3439G by Onsemi is a NPN power BJT with 15W Pd, 350V VCEO, and 0.3A IC. Ideal for high-power applications in industrial electronics due to its single configuration and flange mount package style. With a max operating temperature of 150°C, it offers reliable performance in various environments.

.3 A

350 V

SINGLE

15

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

15 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

15 MHz

MJE344G by Onsemi

MJE344G

Onsemi

The Onsemi MJE344G is a NPN BJT transistor with 200V VCEO, 0.5A IC, and 20W Ptot. Ideal for amplifier applications, it has hFE of 30, fT of 15MHz, and operates up to 150°C. The package is rectangular with flange mount style and matte tin finish in a through-hole configuration.

.5 A

200 V

SINGLE

30

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

15 MHz