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120 MHz Power Bipolar Junction Transistors (BJT) 6

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FZT951QTC by Diodes Incorporated

FZT951QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY

COLLECTOR

5 A

60 V

SINGLE

10

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

120 MHz

2ST1480FP by STMicroelectronics

2ST1480FP

STMicroelectronics

2ST1480FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 25W, collector-emitter voltage of 80V, and operates up to 150 °C. Ideal for efficient control in electronic circuits.

ISOLATED

5 A

80 V

SINGLE

50

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

120 MHz

NSV1C301ET4G-VF01 by Onsemi

NSV1C301ET4G-VF01

Onsemi

NSV1C301ET4G-VF01 by Onsemi is a NPN BJT transistor for switching applications. It has a hFE of 80, VCE of 100V, and IC of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

3 A

100 V

SINGLE

80

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

120 MHz

PBSS5540Z/ZLF by Nexperia

PBSS5540Z/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Reference Standard: IEC-60134;

COLLECTOR

5 A

40 V

SINGLE

250

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

120 MHz

PBSS5540Z/ZLX by Nexperia

PBSS5540Z/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Package Style (Meter): SMALL OUTLINE;

COLLECTOR

5 A

40 V

SINGLE

250

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

120 MHz

ZXTP2014ZQTA by Diodes Incorporated

ZXTP2014ZQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

33 pF

140 V

SINGLE

45

R-PSSO-F3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2.1 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

120 MHz

.33 V