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.1 MHz Power Bipolar Junction Transistors (BJT) 2

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BUF420M by STMicroelectronics

BUF420M

STMicroelectronics

BUF420M by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max VCEsat of 2V, supports up to 200W power dissipation, and operates at a max temp of 200 °C. Ideal for high-performance electronic circuits requiring robust performance.

COLLECTOR

30 A

450 V

SINGLE

TO-3

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

200 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

PIN/PEG

BOTTOM

SWITCHING

SILICON

.1 MHz

3620 ns

2 V

BDV64BG by Onsemi

BDV64BG

Onsemi

BDV64BG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100 V and a max collector current of 10 A. It is commonly used as an amplifier in various applications.

COLLECTOR

10 A

100 V

DARLINGTON WITH BUILT-IN RESISTOR

1000

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

.1 MHz