Loading...

32 W Power Bipolar Junction Transistors (BJT) 4

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BUT11APX,127 by NXP Semiconductors

BUT11APX,127

NXP Semiconductors

NXP Semiconductors' BUT11APX,127 is a NPN BJT transistor with 450V max collector-emitter voltage and 5A max collector current. It has a 32W power dissipation for switching applications at up to 150°C operating temperature. The package is rectangular with through-hole terminals in plastic/epoxy material.

ISOLATED

5 A

450 V

SINGLE

14

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

32 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUT11APX-1200,127 by NXP Semiconductors

BUT11APX-1200,127

NXP Semiconductors

NXP Semiconductors' BUT11APX-1200,127 is a NPN BJT transistor with 550V VCE, 6A IC, and 32W Ptot. Ideal for switching applications in power electronics due to its high voltage and current ratings. Package style is flange mount with through-hole terminals for easy installation.

ISOLATED

6 A

550 V

SINGLE

20

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

32 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BULT106D by STMicroelectronics

BULT106D

STMicroelectronics

BULT106D by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 230 V, a power dissipation of 32 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

2 A

230 V

SINGLE WITH BUILT-IN DIODE

4

TO-126

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

32 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BULT3P3 by STMicroelectronics

BULT3P3

STMicroelectronics

BULT3P3 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 32W, operates up to 150 °C, and supports collector-emitter voltages up to 200V. Ideal for efficient circuit designs in various electronic devices.

3 A

200 V

SINGLE

4

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

32 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON