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3.5 W Power Bipolar Junction Transistors (BJT) 2

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SA2012-TD-E by Onsemi

2SA2012-TD-E

Onsemi

2SA2012-TD-E by Onsemi is a PNP BJT transistor for switching applications. With hFE of 200, it can handle up to 5A collector current and 3.5W power dissipation. Operating at max 150 °C, this transistor has a fT of 350MHz making it suitable for high-frequency applications.

COLLECTOR

5 A

30 V

SINGLE

200

TO-243

R-PSSO-F3

e6

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3.5 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

FLAT

SINGLE

30

SWITCHING

SILICON

350 MHz

PCP1103-TD-H by Onsemi

PCP1103-TD-H

Onsemi

PCP1103-TD-H by Onsemi is a PNP BJT transistor with 3 terminals, capable of handling up to 1.5A collector current and 30V collector-emitter voltage. With a min hFE of 200, it's ideal for switching applications at temperatures up to 150 °C. This surface-mount transistor has a small outline package style suitable for high-frequency operations up to 450MHz.

COLLECTOR

1.5 A

30 V

SINGLE

200

TO-243

R-PSSO-F3

e6

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3.5 W

Other Transistors

YES

TIN BISMUTH

FLAT

SINGLE

30

SWITCHING

SILICON

450 MHz