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2.8 W Power Bipolar Junction Transistors (BJT) 3

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STX616 by STMicroelectronics

STX616

STMicroelectronics

STX616 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 2.8W, operates up to 150 °C, and supports collector-emitter voltages up to 500V. Its cylindrical package ensures efficient thermal management in various electronic circuits.

1.5 A

500 V

SINGLE

4

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

2.8 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

STX13005G-AP by STMicroelectronics

STX13005G-AP

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.8 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 8;

3 A

400 V

SINGLE

8

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

2.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX13005G by STMicroelectronics

STX13005G

STMicroelectronics

STX13005G by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 3A. It has a min. DC current gain of 8, suitable for switching applications with a max. power dissipation of 2.8W in cylindrical package style for through-hole mounting at up to 150°C operating temperature.

3 A

400 V

SINGLE

8

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

2.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON