Loading...

13 W Power Bipolar Junction Transistors (BJT) 3

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BD13710S by Fairchild Semiconductor

BD13710S

Fairchild Semiconductor

Fairchild Semiconductor's BD13710S is a NPN BJT transistor with 60V VCE, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The package style is flange mount with matte tin finish in a rectangular shape.

1.5 A

60 V

SINGLE

63

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

13 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

250 MHz

MJD200T4G by Onsemi

MJD200T4G

Onsemi

MJD200T4G by Onsemi is a NPN BJT transistor with 5A max collector current, 13W power dissipation, and 65MHz transition frequency. Ideal for amplifier applications, it features a small outline package, matte tin terminal finish, and can operate up to 150°C.

COLLECTOR

5 A

25 V

SINGLE

10

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

13 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

65 MHz

MJD200G by Onsemi

MJD200G

Onsemi

The Onsemi MJD200G is a NPN BJT transistor with 5A IC, 25V VCE, and 13W Pd. Ideal for amplifier applications, it has a hFE of 10 and fT of 65MHz. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs.

COLLECTOR

5 A

25 V

SINGLE

10

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

13 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

65 MHz