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10 W Power Bipolar Junction Transistors (BJT) 3

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SAR587D3TL1 by ROHM

2SAR587D3TL1

ROHM

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

65 pF

120 V

SINGLE

120

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

10 W

YES

GULL WING

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

.2 V

KSC1173YTSTUA by Onsemi

KSC1173YTSTUA

Onsemi

KSC1173YTSTUA by Onsemi is a NPN BJT transistor with max VCEsat of 0.8V, hFE of 120, and IC of 3A. Ideal for amplifier applications, it has a max operating temp of 150 °C and collector-emitter voltage of 30V. The package style is flange mount with through-hole terminals in a rectangular shape.

3 A

35 pF

30 V

SINGLE

120

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

10 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

100 MHz

.8 V

TTA004B,Q by Toshiba

TTA004B,Q

Toshiba

TTA004B,Q by Toshiba is a PNP BJT transistor with 160V VCE, 0.5V VCEsat, and 1.5A IC. Ideal for amplifier applications, it has a max power dissipation of 10W and hFE of 140. With a package style of FLANGE MOUNT and operating temp up to 150°C, it offers high performance in through-hole configuration.

1.5 A

17 pF

160 V

SINGLE

140

TO-126

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

10 W

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

100 MHz

.5 V