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2.5 A Power Bipolar Junction Transistors (BJT) 5

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX718STOA by Diodes Incorporated

ZTX718STOA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1.5 W

NO

WIRE

SINGLE

SILICON

180 MHz

.26 V

ZTX718STOB by Diodes Incorporated

ZTX718STOB

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1.5 W

NO

WIRE

SINGLE

SILICON

180 MHz

.26 V

ZTX718STZ by Diodes Incorporated

ZTX718STZ

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

1 W

1.5 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

180 MHz

.26 V

BUL741FP by STMicroelectronics

BUL741FP

STMicroelectronics

BUL741FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 60W, a collector-emitter voltage of 400V, and operates up to 150 °C. Ideal for high-power circuits with through-hole mounting.

ISOLATED

2.5 A

400 V

SINGLE

25

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BULD741-1 by STMicroelectronics

BULD741-1

STMicroelectronics

BULD741-1 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 30W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.

2.5 A

400 V

SINGLE

25

TO-251

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON