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7000 MHz Other Function Transistors 2

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
PBR941B,215 by NXP Semiconductors

PBR941B,215

NXP Semiconductors

PBR941B,215 from NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.36W, a min DC current gain (hFE) of 100, and operates up to 150 °C. Ideal for high-frequency circuits with a transition frequency of 7000 MHz.

.05 A

SINGLE

100

e3

1

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

TIN

30

7000 MHz

2SC5095O(TE85L,F) by Toshiba

2SC5095O(TE85L,F)

Toshiba

Toshiba's 2SC5095O(TE85L,F) NPN transistor offers a max power dissipation of 0.1W, hFE of 80, and fT of 7000MHz. Ideal for applications requiring low collector current (0.015A), such as high-frequency amplification in surface-mount configurations up to 125°C.

.015 A

SINGLE

80

1

125 Cel

NPN

.1 W

Other Transistors

YES

7000 MHz