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7000 MHz Other Function Transistors 2

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
PBR941B,215 by NXP Semiconductors

PBR941B,215

NXP Semiconductors

PBR941B,215 from NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.36W, a min DC current gain (hFE) of 100, and operates up to 150 °C. Ideal for high-frequency circuits with a transition frequency of 7000 MHz.

.05 A

SINGLE

100

e3

1

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

TIN

30

7000 MHz

2SC5095O(TE85L,F) by Toshiba

2SC5095O(TE85L,F)

Toshiba

Toshiba's 2SC5095O(TE85L,F) NPN transistor offers a max power dissipation of 0.1W, hFE of 80, and fT of 7000MHz. Ideal for applications requiring low collector current (0.015A), such as high-frequency amplification in surface-mount configurations up to 125°C.

.015 A

SINGLE

80

1

125 Cel

NPN

.1 W

Other Transistors

YES

7000 MHz