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.36 W Other Function Transistors 6

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
SMBTA42-E6433 by Infineon Technologies

SMBTA42-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

25

1

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

50 MHz

SMBTA92-E6433 by Infineon Technologies

SMBTA92-E6433

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

25

1

1

150 Cel

260

PNP

.36 W

Other Transistors

YES

50 MHz

BFG480W,135 by NXP Semiconductors

BFG480W,135

NXP Semiconductors

BFG480W,135 by NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.36 W, a min DC current gain (hFE) of 40, and operates up to 150 °C. Its surface mount design ensures efficient integration in compact circuits.

.25 A

SINGLE

40

e3

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

TIN

30

PBR941B,215 by NXP Semiconductors

PBR941B,215

NXP Semiconductors

PBR941B,215 from NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.36W, a min DC current gain (hFE) of 100, and operates up to 150 °C. Ideal for high-frequency circuits with a transition frequency of 7000 MHz.

.05 A

SINGLE

100

e3

1

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

TIN

30

7000 MHz

BFW20 by Texas Instruments

BFW20

Texas Instruments

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Operating Temperature: 175 Cel;

SINGLE

1

175 Cel

PNP

.36 W

Other Transistors

NO

40 MHz

BSS83PE6327 by Infineon Technologies

BSS83PE6327

Infineon Technologies

BSS83PE6327 by Infineon is a P-CHANNEL transistor with a max drain current of 0.33A and power dissipation of 0.36W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C. This surface-mount transistor utilizes metal-oxide semiconductor technology, making it ideal for various electronic circuits.

SINGLE

.33 A

.33 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.36 W

Other Transistors

YES