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1 A Other Function Transistors 20

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
DP200 by Kodenshi Auk

DP200

Kodenshi Auk

Kodenshi Auk's DP200 is a PNP transistor with max power dissipation of 0.625W, ideal for low-power applications. With a min hFE of 40 and max IC of 1A, it operates up to 150°C, making it suitable for various electronic circuits requiring single configuration transistors.

1 A

SINGLE

40

1

150 Cel

PNP

.625 W

Other Transistors

NO

BSP61-E6327 by Infineon Technologies

BSP61-E6327

Infineon Technologies

PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

1 A

DARLINGTON

1000

1

150 Cel

260

PNP

1.5 W

Other Transistors

YES

BSP60-E6433 by Infineon Technologies

BSP60-E6433

Infineon Technologies

PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 1000;

1 A

DARLINGTON

1000

e0

1

150 Cel

235

PNP

1.5 W

Other Transistors

YES

TIN LEAD

BSP51-E6327 by Infineon Technologies

BSP51-E6327

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

1 A

DARLINGTON

1000

1

150 Cel

260

NPN

1.5 W

Other Transistors

YES

2SC4942-T1-AZ by Renesas Electronics

2SC4942-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

1 A

SINGLE

30

1

150 Cel

NPN

2 W

Other Transistors

YES

STX93003-AP by STMicroelectronics

STX93003-AP

STMicroelectronics

STX93003-AP by STMicroelectronics is a PNP transistor with max power dissipation of 1.5W, hFE of 16, and IC of 1A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.

1 A

SINGLE

16

e3

1

150 Cel

PNP

1.5 W

Other Transistors

NO

Matte Tin (Sn)

TIP47-S by Bourns

TIP47-S

Bourns

The Bourns TIP47-S is an NPN transistor with a max power dissipation of 40W and max collector current of 1A. With a min DC current gain of 30, it operates up to 150°C. Ideal for various applications requiring a single configuration transistor with high power handling capabilities.

1 A

SINGLE

30

1

150 Cel

NPN

40 W

Other Transistors

NO

BCX5416H6327XTSA1 by Infineon Technologies

BCX5416H6327XTSA1

Infineon Technologies

Infineon BCX5416H6327XTSA1 is an NPN transistor with max. power dissipation of 2W, min. DC current gain of 100, and max. collector current of 1A. Ideal for surface mount applications in electronics due to its single configuration and operating temp up to 150°C.

1 A

SINGLE

100

e3

1

1

150 Cel

245

NPN

2 W

Other Transistors

YES

TIN

BCX55H6327XTSA1 by Infineon Technologies

BCX55H6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; JESD-609 Code: e3;

1 A

SINGLE

40

e3

1

1

150 Cel

NPN

2 W

Other Transistors

YES

TIN

BCX56H6327XTSA1 by Infineon Technologies

BCX56H6327XTSA1

Infineon Technologies

BCX56H6327XTSA1 by Infineon Technologies is an NPN transistor with a single configuration, suitable for surface mount applications. It offers a max power dissipation of 2W, min DC current gain of 40 (hFE), and can operate at temperatures up to 150°C. Ideal for low-power electronic circuits requiring a collector current of up to 1A.

1 A

SINGLE

40

e3

1

1

150 Cel

NPN

2 W

Other Transistors

YES

TIN

BCP5116H6433XTMA1 by Infineon Technologies

BCP5116H6433XTMA1

Infineon Technologies

Infineon's BCP5116H6433XTMA1 is a PNP transistor with max power dissipation of 2W, hFE of 100, and IC of 1A. Ideal for surface mount applications in electronics due to its single configuration and operating temp up to 150°C.

1 A

SINGLE

100

1

1

150 Cel

PNP

2 W

Other Transistors

YES

CJD47TR13PBFREE by Central Semiconductor

CJD47TR13PBFREE

Central Semiconductor

CJD47TR13PBFREE by Central Semiconductor is an NPN transistor with a max power dissipation of 15W and a min DC current gain of 30. It is surface mountable and can handle a max collector current of 1A. This transistor is commonly used in various electronic applications.

1 A

SINGLE

30

1

150 Cel

NPN

15 W

Other Transistors

YES

10 MHz

BC635-16,126 by NXP Semiconductors

BC635-16,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

100

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

BC875,126 by NXP Semiconductors

BC875,126

NXP Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

DARLINGTON

2000

150 Cel

NPN

.6 W

Other Transistors

NO

200 MHz

PBSS4160K,115 by NXP Semiconductors

PBSS4160K,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

100

1

150 Cel

NPN

.425 W

Other Transistors

YES

150 MHz

PBSS5160K,115 by NXP Semiconductors

PBSS5160K,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

100

1

150 Cel

PNP

.425 W

Other Transistors

YES

150 MHz

PBSS8110AS,126 by NXP Semiconductors

PBSS8110AS,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

80

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

PBSS8110S,126 by NXP Semiconductors

PBSS8110S,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

80

1

150 Cel

NPN

.83 W

Other Transistors

NO

100 MHz

PBSS9110AS,126 by NXP Semiconductors

PBSS9110AS,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

125

1

150 Cel

PNP

.83 W

Other Transistors

NO

100 MHz

PBSS9110S,126 by NXP Semiconductors

PBSS9110S,126

NXP Semiconductors

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

1 A

125

150 Cel

PNP

.83 W

Other Transistors

NO

100 MHz