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.25 A Other Function Transistors 3

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
NE461M02-T1-AZ by Renesas Electronics

NE461M02-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .25 A; No. of Elements: 1;

.25 A

SINGLE

40

1

150 Cel

NPN

2 W

Other Transistors

YES

BFG480W,135 by NXP Semiconductors

BFG480W,135

NXP Semiconductors

BFG480W,135 by NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.36 W, a min DC current gain (hFE) of 40, and operates up to 150 °C. Its surface mount design ensures efficient integration in compact circuits.

.25 A

SINGLE

40

e3

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

TIN

30

BFG10,215 by NXP Semiconductors

BFG10,215

NXP Semiconductors

BFG10,215 by NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.4 W, a min DC current gain (hFE) of 25, and operates up to 175 °C. Ideal for RF amplification in compact devices.

.25 A

SINGLE

25

e3

1

175 Cel

NPN

.4 W

Other Transistors

YES

Matte Tin (Sn)