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.12 A Other Function Transistors 2

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFR540,235 by NXP Semiconductors

BFR540,235

NXP Semiconductors

BFR540,235 by NXP Semiconductors is an NPN transistor designed for surface mount applications. It features a max power dissipation of 0.5W, a min DC current gain (hFE) of 60, and operates up to 150 °C. Ideal for amplifying signals in various electronic circuits.

.12 A

SINGLE

60

e3

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

TIN

30

BFG540W/XR,135 by NXP Semiconductors

BFG540W/XR,135

NXP Semiconductors

BFG540W/XR,135 from NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.5 W, a min DC current gain (hFE) of 100, and operates up to 175 °C. Perfect for surface mount designs in communication devices.

.12 A

SINGLE

100

1

175 Cel

NPN

.5 W

Other Transistors

YES