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.035 A Other Function Transistors 9

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BFP420F-E6327 by Infineon Technologies

BFP420F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

50

1

1

150 Cel

260

NPN

.16 W

Other Transistors

YES

18000 MHz

BFR360L3-E6327 by Infineon Technologies

BFR360L3-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

90

1

150 Cel

NPN

.21 W

Other Transistors

YES

11000 MHz

BFR360F-E6327 by Infineon Technologies

BFR360F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

60

1

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

11000 MHz

BFR182W-E6327 by Infineon Technologies

BFR182W-E6327

Infineon Technologies

BFR182W-E6327 by Infineon Technologies is an NPN transistor with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.25W, min DC current gain of 50, and nominal transition frequency of 6000MHz. Ideal for high-frequency amplification in electronic circuits with operating temperatures up to 150°C.

.035 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

6000 MHz

NE68019-T1-A by Renesas Electronics

NE68019-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .035 A; No. of Elements: 1;

.035 A

SINGLE

80

1

150 Cel

NPN

.1 W

Other Transistors

YES

NE68039-T1-A by Renesas Electronics

NE68039-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .035 A; Minimum DC Current Gain (hFE): 50;

.035 A

SINGLE

50

1

150 Cel

NPN

.2 W

Other Transistors

YES

BFR93AW,135 by NXP Semiconductors

BFR93AW,135

NXP Semiconductors

NXP Semiconductors' BFR93AW,135 is an NPN transistor with a single configuration and surface-mount capability. It boasts a max power dissipation of 0.3W, DC current gain of 40, and transition frequency of 4500MHz. Ideal for applications requiring high-frequency signal amplification in environments up to 150°C.

.035 A

SINGLE

40

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

4500 MHz

BFS466L6E6327 by Infineon Technologies

BFS466L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A; Peak Reflow Temperature (C): 260;

.035 A

90

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

11000 MHz

BFR360TE6327 by Infineon Technologies

BFR360TE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

60

1

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

10000 MHz