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Fairchild Semiconductor Insulated Gate Bipolar Transistors (IGBT) 9

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FGH15T120SMD_F155 by Fairchild Semiconductor

FGH15T120SMD_F155

Fairchild Semiconductor

Fairchild Semiconductor's FGH15T120SMD_F155 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 333W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 534ns.

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.5 V

25 V

TO-247AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

333 W

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

534 ns

74 ns

FGH40T120SMD_F155 by Fairchild Semiconductor

FGH40T120SMD_F155

Fairchild Semiconductor

FGH40T120SMD_F155 by Fairchild Semiconductor is an N-CHANNEL IGBT with 555W power dissipation, 1200V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery and renewable energy systems.

80 A

1200 V

7.5 V

25 V

e3

175 Cel

N-CHANNEL

555 W

Insulated Gate BIP Transistors

NO

MATTE TIN

HGT1N40N60A4D by Fairchild Semiconductor

HGT1N40N60A4D

Fairchild Semiconductor

Fairchild Semiconductor's HGT1N40N60A4D is an N-CHANNEL IGBT with 110A IC, 600V VCE, and 298W Pd. Ideal for POWER CONTROL applications, it features a toff of 240ns, tf of 95ns, and ton of 47ns. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

LOW CONDUCTION LOSS

ISOLATED

110 A

600 V

SINGLE WITH BUILT-IN DIODE

95 ns

7 V

20 V

R-PUFM-X4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

298 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

240 ns

47 ns

FGP30N6S2D by Fairchild Semiconductor

FGP30N6S2D

Fairchild Semiconductor

Fairchild Semiconductor's FGP30N6S2D is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 45A max collector current. It has a built-in diode, 100ns fall time, and 163ns turn off time. Ideal for power control applications with a max power dissipation of 167W at up to 150°C operating temperature.

LOW CONDUCTION LOSS

45 A

600 V

SINGLE WITH BUILT-IN DIODE

100 ns

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

167 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

163 ns

28 ns

FGH60N6S2 by Fairchild Semiconductor

FGH60N6S2

Fairchild Semiconductor

FGH60N6S2 by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 625W. It has a nominal turn-off time of 187ns, making it suitable for power control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, ideal for high-power applications in industrial settings.

LOW CONDUCTION LOSS

COLLECTOR

75 A

600 V

SINGLE

90 ns

5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

625 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

187 ns

59 ns

FMG1G100US60L by Fairchild Semiconductor

FMG1G100US60L

Fairchild Semiconductor

FMG1G100US60L by Fairchild Semiconductor is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 2.8V VCE. Ideal for MOTOR CONTROL applications, it has a toff of 320ns and ton of 85ns. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material and SILICON element.

LOW CONDUCTION LOSS

ISOLATED

100 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X7

1

7

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

400 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

320 ns

85 ns

2.8 V

FGH20N6S2D by Fairchild Semiconductor

FGH20N6S2D

Fairchild Semiconductor

FGH20N6S2D by Fairchild Semiconductor is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a single configuration with built-in diode, ideal for power control applications. This transistor offers fast switching times with a nominal turn-off time of 205ns and a max fall time of 105ns.

LOW CONDUCTION LOSS

28 A

600 V

SINGLE WITH BUILT-IN DIODE

105 ns

5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

205 ns

11.5 ns

SGL160N60UFTU by Fairchild Semiconductor

SGL160N60UFTU

Fairchild Semiconductor

SGL160N60UFTU by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 160A. It is designed for MOTOR CONTROL applications, featuring a Nominal Turn Off Time of 262ns and Max Power Dissipation of 250W.

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

160 A

600 V

SINGLE

150 ns

6.5 V

20 V

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

262 ns

150 ns

FGH60N60SFDTU_F085 by Fairchild Semiconductor

FGH60N60SFDTU_F085

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 120 A; Package Style (Meter): FLANGE MOUNT;

RC-IGBT

COLLECTOR

120 A

600 V

SINGLE

62 ns

6.6 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

378 W

AEC-Q101

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

166 ns

76 ns

2.9 V