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88 W Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGFW35HF60W by STMicroelectronics

STGFW35HF60W

STMicroelectronics

STMicroelectronics' STGFW35HF60W is an N-CHANNEL IGBT with 88W power dissipation, 600V collector-emitter voltage, and 36A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial equipment and motor drives.

36 A

600 V

5.75 V

20 V

150 Cel

N-CHANNEL

88 W

Insulated Gate BIP Transistors

NO

NGD8205NT4 by Onsemi

NGD8205NT4

Onsemi

NGD8205NT4 by Onsemi is an N-CHANNEL IGBT with 20A IC, 390V VCE, and 88W Pd. Ideal for automotive ignition applications due to its built-in diode and resistor. Features GULL WING terminals, RECTANGULAR package shape, and operates up to 175 °C.

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

88 W

Not Qualified

8000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18500 ns

6500 ns

STGB7H60DF by STMicroelectronics

STGB7H60DF

STMicroelectronics

STGB7H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 14A, and Pmax of 88W. Ideal for POWER CONTROL applications due to its fast turn-off time (263ns) and high operating temperature range (-55 to 175°C). The device comes in a small outline package with built-in diode for surface mount installation.

COLLECTOR

14 A

600 V

SINGLE WITH BUILT-IN DIODE

6.9 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

88 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

263 ns

42.8 ns

1.95 V

STGB5H60DF by STMicroelectronics

STGB5H60DF

STMicroelectronics

STGB5H60DF from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 1.95V, supports up to 600V collector-emitter voltage, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.

BULK: 1000

COLLECTOR

10 A

600 V

SINGLE WITH BUILT-IN DIODE

6.9 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

88 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

39 ns

1.95 V