Loading...

83 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FGAF30S65AQ by Onsemi

FGAF30S65AQ

Onsemi

FGAF30S65AQ by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a collector-emitter voltage of 650V. Ideal for switching applications, it has a turn-off time of 166ns and can handle a max collector current of 60A.

60 A

650 V

SINGLE WITH BUILT-IN DIODE

6.6 V

20 V

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

83 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

166 ns

30 ns

2.1 V

NXH75M65L4Q1PTG by Onsemi

NXH75M65L4Q1PTG

Onsemi

NXH75M65L4Q1PTG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 59A IC, and 83W power dissipation. Ideal for POWER CONTROL applications, it features a fast turn-off time of 146ns and operates b/w -40 to 150 °C.

ISOLATED

59 A

650 V

COMPLEX

5.2 V

20 V

R-XUFM-X27

e3

6

27

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

83 W

NO

MATTE TIN

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

146 ns

72 ns

2.22 V

NXH75M65L4Q1SG by Onsemi

NXH75M65L4Q1SG

Onsemi

NXH75M65L4Q1SG by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 2.22V, it offers a Max Collector-Emitter Voltage of 650V and Max Power Dissipation of 83W. Ideal for high-power systems requiring fast switching capabilities with Nominal Turn Off Time of 146ns and Nominal Turn On Time of 72ns.

ISOLATED

59 A

650 V

COMPLEX

5.2 V

20 V

R-XUFM-X27

6

27

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

83 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

146 ns

72 ns

2.22 V