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70 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IKP08N65H5XKSA1 by Infineon Technologies

IKP08N65H5XKSA1

Infineon Technologies

IKP08N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCEsat, 18A IC, and 70W power dissipation. Ideal for POWER CONTROL applications due to its built-in diode, 130ns turn-off time, and -40 to 175°C operating temperature range.

COLLECTOR

18 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

130 ns

16 ns

2.1 V

STGB3NB60SDT4 by STMicroelectronics

STGB3NB60SDT4

STMicroelectronics

STGB3NB60SDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 6A max collector current, and 70W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 4800ns.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

70 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

4800 ns

275 ns

STGP3NB60HD by STMicroelectronics

STGP3NB60HD

STMicroelectronics

STGP3NB60HD by STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 70 W, and fast switching times (ton: 16 ns, toff: 168 ns). Its flange mount design ensures reliable performance in demanding environments.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

168 ns

16 ns