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600 W Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS100R17N3E4BOSA1 by Infineon Technologies

FS100R17N3E4BOSA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Voltage: 20 V; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

100 A

1700 V

20 V

1

175 Cel

NOT SPECIFIED

600 W

Insulated Gate BIP Transistors

NOT SPECIFIED

2.3 V

FS100R17N3E4B11BOSA1 by Infineon Technologies

FS100R17N3E4B11BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Transistor Application: POWER CONTROL; Nominal Turn On Time (ton): 280 ns;

ISOLATED

1700 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X35

6

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

600 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1240 ns

280 ns

2.3 V

STGE200NB60S by STMicroelectronics

STGE200NB60S

STMicroelectronics

STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.

ISOLATED

200 A

600 V

SINGLE

20 V

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

600 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

4600 ns

170 ns

1.6 V

FGH60N60SMD-F085 by Onsemi

FGH60N60SMD-F085

Onsemi

FGH60N60SMD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 600W Ptot. Ideal for power control applications due to its fast tr of 60ns and tf of 20ns. Its single configuration with built-in diode makes it suitable for high-power switching needs.

COLLECTOR

120 A

600 V

SINGLE WITH BUILT-IN DIODE

20 ns

6 V

20 V

TO-247AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

600 W

AEC-Q101

60 ns

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

139 ns

66 ns

IXYT40N120A4HV by Littelfuse

IXYT40N120A4HV

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 140 A; No. of Terminals: 2;

COLLECTOR

140 A

1200 V

SINGLE

6.5 V

20 V

TO-268AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

600 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

1040 ns

67 ns

1.8 V