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536 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NGTB75N65FL2WAG by Onsemi

NGTB75N65FL2WAG

Onsemi

NGTB75N65FL2WAG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat and 200A IC, ideal for POWER CONTROL applications. Featuring a 78ns turn on time and 262ns turn off time, this transistor has a max power dissipation of 536W. Its package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

200 A

650 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T4

e3

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

536 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

262 ns

78 ns

2 V

NGTB40N120FL2WAG by Onsemi

NGTB40N120FL2WAG

Onsemi

NGTB40N120FL2WAG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 536W power dissipation. Ideal for power control applications, it features a built-in diode, 360ns turn-off time, and -55 to 175 °C operating temperature range.

160 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T4

e3

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

536 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

360 ns

65 ns

2.4 V

IKZ75N65EL5XKSA1 by Infineon Technologies

IKZ75N65EL5XKSA1

Infineon Technologies

IKZ75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 536W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.35V and fast switching times (ton:133ns, toff:474ns). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

COLLECTOR

100 A

650 V

SINGLE WITH BUILT-IN DIODE

5.8 V

20 V

TO-247

R-PSFM-T4

e3

1

4

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

536 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

474 ns

133 ns

1.35 V