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40 W Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGF35HF60W by STMicroelectronics

STGF35HF60W

STMicroelectronics

STMicroelectronics' STGF35HF60W is an N-CHANNEL IGBT with 600V VCE, 19A IC, and 40W Pd. It operates up to 150 °C making it ideal for high-power applications like motor drives and inverters.

19 A

600 V

5.75 V

20 V

150 Cel

N-CHANNEL

40 W

Insulated Gate BIP Transistors

NO

STGF30NC60S by STMicroelectronics

STGF30NC60S

STMicroelectronics

STGF30NC60S from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 555ns, and can handle up to 22A. Ideal for high-temperature environments with a max operating temp of 150 °C.

ISOLATED

22 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

40 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

555 ns

30 ns

STGF20NB60S by STMicroelectronics

STGF20NB60S

STMicroelectronics

STGF20NB60S by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 24A max collector current, and 40W max power dissipation. Ideal for motor control applications due to its single configuration and fast turn-on time of 162ns.

ISOLATED

24 A

600 V

SINGLE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

40 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

3600 ns

162 ns

IKA10N65ET6XKSA1 by Infineon Technologies

IKA10N65ET6XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 15 A; Package Shape: RECTANGULAR;

ISOLATED

15 A

650 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

40 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

152 ns

48 ns

1.9 V

FGD3N60LSDTM-T by Onsemi

FGD3N60LSDTM-T

Onsemi

FGD3N60LSDTM-T by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.5V and a max IC of 6A. Ideal for MOTOR CONTROL applications, it has a turn-off time of 1420ns and operates at temperatures ranging from -55 to 150 °C.

LOW CONDUCTION LOSS

COLLECTOR

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

25 V

TO-252AA

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

40 W

YES

GULL WING

SINGLE

MOTOR CONTROL

SILICON

1420 ns

85 ns

1.5 V