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360 W Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGW50H60DF by STMicroelectronics

STGW50H60DF

STMicroelectronics

STGW50H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 100A max collector current. It has a built-in diode, 285ns turn-off time, and 360W power dissipation. Ideal for power control applications requiring high efficiency and reliability in a flange mount package.

100 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

360 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

285 ns

91 ns

STGW60H65F by STMicroelectronics

STGW60H65F

STMicroelectronics

STGW60H65F by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It's used for POWER CONTROL applications due to its fast turn-off time of 265ns and high operating temperature of 150 °C. The transistor comes in a RECTANGULAR package with THROUGH-HOLE terminals.

120 A

650 V

SINGLE

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

360 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

265 ns

96 ns

STGW60H65DRF by STMicroelectronics

STGW60H65DRF

STMicroelectronics

STGW60H65DRF by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It operates up to 150 °C making it ideal for high-power applications in industrial electronics and motor control systems.

120 A

650 V

20 V

e3

150 Cel

N-CHANNEL

360 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

STGW60H65DF by STMicroelectronics

STGW60H65DF

STMicroelectronics

STGW60H65DF by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It is used for power control applications due to its fast turn-off time of 247ns and turn-on time of 113ns. The transistor comes in a rectangular package with through-hole terminals and built-in diode.

120 A

650 V

SINGLE WITH BUILT-IN DIODE

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

360 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

113 ns