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349 W Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IHW30N135R3FKSA1 by Infineon Technologies

IHW30N135R3FKSA1

Infineon Technologies

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Gate-Emitter Voltage: 20 V;

60 A

1350 V

6.4 V

20 V

e3

175 Cel

N-CHANNEL

349 W

Insulated Gate BIP Transistors

NO

TIN

IHW30N120R3FKSA1 by Infineon Technologies

IHW30N120R3FKSA1

Infineon Technologies

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 60 A; Terminal Finish: TIN; Maximum Gate-Emitter Voltage: 20 V;

60 A

1200 V

6.4 V

20 V

e3

175 Cel

N-CHANNEL

349 W

Insulated Gate BIP Transistors

NO

TIN

FGH60T65SHD-F155 by Onsemi

FGH60T65SHD-F155

Onsemi

FGH60T65SHD-F155 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.1V and IC of 120A, ideal for POWER CONTROL applications. It has a toff of 165ns, ton of 85ns, and can operate at temperatures ranging from -55°C to 175°C.

RC-IGBT

120 A

650 V

SINGLE WITH BUILT-IN DIODE

7.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

349 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

165 ns

85 ns

2.1 V

NGTB25N120FL3WG by Onsemi

NGTB25N120FL3WG

Onsemi

NGTB25N120FL3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 349W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. This FLANGE MOUNT device has a turn-off time of 282ns and turn-on time of 36ns.

50 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

349 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

282 ns

36 ns

1.95 V