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3350 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FF600R12IE4BOSA1 by Infineon Technologies

FF600R12IE4BOSA1

Infineon Technologies

FF600R12IE4BOSA1 by Infineon is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.05V and can handle up to 600A of Collector Current. Ideal for POWER CONTROL applications, it operates at a max temperature of 175°C, making it suitable for high-power systems.

ISOLATED

600 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

20 V

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

3350 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1020 ns

410 ns

2.05 V

FF600R12IP4VBOSA1 by Infineon Technologies

FF600R12IP4VBOSA1

Infineon Technologies

FF600R12IP4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max VCEsat of 2.05V and can handle up to 1200V collector-emitter voltage. Ideal for high-power applications requiring fast switching capabilities with a max power dissipation of 3350W at temperatures ranging from -40 to 150°C.

ISOLATED

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-PUFM-X10

2

10

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

3350 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1050 ns

370 ns

2.05 V

FF600R12ME4AB11BOSA1 by Infineon Technologies

FF600R12ME4AB11BOSA1

Infineon Technologies

Infineon Technologies' FF600R12ME4AB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.1V and Max Collector-Emitter Voltage of 1200V, it offers high power dissipation up to 3350W. With fast turn-off time (toff) of 620ns and turn-on time (ton) of 230ns, this UL RECOGNIZED transistor operates b/w -40°C to 150°C efficiently.

ISOLATED

950 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X11

2

11

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

3350 W

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

620 ns

230 ns

2.1 V