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30 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
TIG056BF-1E by Onsemi

TIG056BF-1E

Onsemi

Onsemi's TIG056BF-1E is an N-CHANNEL IGBT with 30W power dissipation, 150 °C max temp, and 430V collector-emitter voltage. Ideal for high-power applications in industrial machinery and renewable energy systems due to its robust design and efficient performance.

430 V

5 V

33 V

e3

150 Cel

N-CHANNEL

30 W

Insulated Gate BIP Transistors

NO

MATTE TIN

STGF10M65DF2 by STMicroelectronics

STGF10M65DF2

STMicroelectronics

STGF10M65DF2 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and operates b/w -55 °C to 175 °C. Its compact design ensures efficient thermal management in various electronic systems.

ISOLATED

20 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

30 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

260 ns

27 ns

2 V

GT15J341,S4X by Toshiba

GT15J341,S4X

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 15 A; No. of Elements: 1;

ISOLATED

15 A

600 V

SINGLE WITH BUILT-IN DIODE

25 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

30 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

320 ns

180 ns

2 V