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238 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FGH40T65SQD_F155 by Onsemi

FGH40T65SQD_F155

Onsemi

FGH40T65SQD_F155 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 80A. It is used for POWER CONTROL applications, featuring a max VCE of 650V and operating temperature range from -55 to 175 °C.

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

238 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

2.1 V

STGWA40IH65DF by STMicroelectronics

STGWA40IH65DF

STMicroelectronics

STGWA40IH65DF from STMicroelectronics is a robust N-channel IGBT ideal for high-power applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and handles up to 80A current. Its compact design ensures efficient thermal management in demanding environments.

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

238 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

263 ns

2 V

FGHL40T65MQD by Onsemi

FGHL40T65MQD

Onsemi

FGHL40T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power amplifier applications, featuring a single configuration with built-in diode. With a max power dissipation of 238W and operating temperature up to 175°C, it offers reliable performance in various high-power electronic systems.

RC-IGBT

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

238 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER AMPLIFIER

SILICON

203 ns

52 ns

1.8 V