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236 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FPF2G75FH07BP by Onsemi

FPF2G75FH07BP

Onsemi

FPF2G75FH07BP by Onsemi is an N-CHANNEL IGBT with 6 elements, VCEsat of 2.2V, and IC of 75A. Ideal for POWER CONTROL applications, it has a toff of 462ns and ton of 124ns. Operating b/w -40 °C to 150°C, it offers a max VCE of 650V and Pabs of 236W in a RECTANGULAR package style.

LOW CONDUCTION LOSS

75 A

650 V

COMPLEX

6.8 V

25 V

R-XUFM-X32

6

32

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

236 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

462 ns

124 ns

2.2 V

SNXH75M65L3F2STG by Onsemi

SNXH75M65L3F2STG

Onsemi

SNXH75M65L3F2STG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 75A IC, and 236W power dissipation. Ideal for general purpose switching applications due to its built-in diode and thermistor. Features include a fast turn-off time of 432ns and a max operating temperature of 150 °C.

LOW SWITCHING LOSSES

ISOLATED

75 A

650 V

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

6.8 V

25 V

R-PUFM-P32

1

32

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

236 W

NO

PIN/PEG

UPPER

GENERAL PURPOSE SWITCHING

SILICON

432 ns

129 ns

2.2 V