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223 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NGTB50N60FLWG by Onsemi

NGTB50N60FLWG

Onsemi

NGTB50N60FLWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 223W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.

100 A

600 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

223 W

Insulated Gate BIP Transistors

NO

Tin (Sn)

NGTB50N60FWG by Onsemi

NGTB50N60FWG

Onsemi

NGTB50N60FWG by Onsemi is an N-CHANNEL IGBT with 223W power dissipation, 600V collector-emitter voltage, and 100A collector current. It operates up to 150 °C and has a gate-emitter threshold voltage of 6.5V. Ideal for high-power applications like motor drives and inverters due to its robust specifications.

100 A

600 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

223 W

Insulated Gate BIP Transistors

NO

TIN

RGS60TS65DHRC11 by ROHM

RGS60TS65DHRC11

ROHM

ROHM RGS60TS65DHRC11 is an N-CHANNEL IGBT with 650V VCEsat, 56A IC, and 223W power dissipation. Ideal for power control applications due to its fast turn-off time of 290ns and built-in diode. AEC-Q101 certified for automotive use in harsh environments.

56 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

30 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

223 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

290 ns

46 ns

2.1 V