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208 W Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AOK30B60D1 by Alpha & Omega Semiconductor

AOK30B60D1

Alpha & Omega Semiconductor

AOK30B60D1 by Alpha & Omega Semiconductor is an N-CHANNEL IGBT with 208W power dissipation, 150°C max temp, and 600V collector-emitter voltage. Ideal for high-power applications requiring up to 60A collector current like motor drives and inverters.

60 A

600 V

20 V

150 Cel

N-CHANNEL

208 W

Insulated Gate BIP Transistors

NO

A1P50S65M2-F by STMicroelectronics

A1P50S65M2-F

STMicroelectronics

A1P50S65M2-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 50A collector current, and operates at temperatures from -40 °C to 150 °C. Ideal for high-efficiency power management systems.

ISOLATED

50 A

650 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

208 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

331 ns

167.2 ns

2.3 V

A1P50S65M2 by STMicroelectronics

A1P50S65M2

STMicroelectronics

A1P50S65M2 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 650V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a robust design, it handles up to 208W power dissipation.

ISOLATED

50 A

650 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

208 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

331 ns

167.2 ns

2.3 V

A2C50S65M2-F by STMicroelectronics

A2C50S65M2-F

STMicroelectronics

A2C50S65M2-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 650V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a power dissipation of 208W, it's ideal for high-performance systems.

ISOLATED

50 A

650 V

COMPLEX

7 V

20 V

R-XUFM-X35

7

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

208 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

298 ns

167 ns

2.3 V

A2C50S65M2 by STMicroelectronics

A2C50S65M2

STMicroelectronics

A2C50S65M2 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 50A collector current, and operates in temperatures from -40 °C to 150 °C. Ideal for high-efficiency power management systems.

ISOLATED

50 A

650 V

COMPLEX

7 V

20 V

R-XUFM-X35

7

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

208 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

298 ns

167 ns

2.3 V