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194 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH300B100H4Q2F2SG-R by Onsemi

NXH300B100H4Q2F2SG-R

Onsemi

NXH300B100H4Q2F2SG-R by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 2.25V, it offers a Max Collector-Emitter Voltage of 1000V and Max Power Dissipation of 194W. This COMPLEX transistor has a Nominal Turn Off Time of 326ns, making it suitable for high-power operations in various industrial settings.

ISOLATED

73 A

1000 V

COMPLEX

5.9 V

20 V

R-XUFM-X59

6

59

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

194 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

326 ns

110.42 ns

2.25 V

NXH300B100H4Q2F2SG by Onsemi

NXH300B100H4Q2F2SG

Onsemi

NXH300B100H4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 6 elements, VCEsat of 2.25V, and IC of 73A. Ideal for POWER CONTROL applications, it has a toff of 326ns, ton of 110.42ns, and can handle up to 194W power dissipation.

ISOLATED

73 A

1000 V

COMPLEX

5.9 V

20 V

R-XUFM-X59

6

59

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

194 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

326 ns

110.42 ns

2.25 V

NXH300B100H4Q2F2PG by Onsemi

NXH300B100H4Q2F2PG

Onsemi

NXH300B100H4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 6 elements, VCEsat of 2.25V, and IC of 73A. Ideal for POWER CONTROL applications, it has a toff of 326ns and ton of 110.42ns. Operating temperature ranges from -40 °C to 175°C, making it suitable for high-power systems.

ISOLATED

73 A

1000 V

COMPLEX

5.9 V

20 V

R-XUFM-X59

6

59

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

194 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

326 ns

110.42 ns

2.25 V