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166 W Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FGB3440G2-F085 by Onsemi

FGB3440G2-F085

Onsemi

FGB3440G2-F085 by Onsemi is an N-CHANNEL IGBT with 26.9A IC, 390V VCE, and 166W power dissipation. Ideal for applications requiring high power handling and temperature resistance up to 175°C. Suitable for surface mount assembly with a rise time of 7000ns and fall time of 15000ns.

26.9 A

390 V

15000 ns

2.2 V

12 V

e3

1

175 Cel

260

N-CHANNEL

166 W

7000 ns

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

30

STGWA20M65DF2 by STMicroelectronics

STGWA20M65DF2

STMicroelectronics

STGWA20M65DF2 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and operates b/w -55 °C to 175 °C. Its compact design supports efficient thermal management in various electronic systems.

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

166 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

252 ns

39.6 ns

2 V

AIKW40N65DH5XKSA1 by Infineon Technologies

AIKW40N65DH5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 40 A; Maximum Operating Temperature: 175 Cel;

40 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

166 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

299 ns

36 ns

2.05 V

AIKW20N60CTXKSA1 by Infineon Technologies

AIKW20N60CTXKSA1

Infineon Technologies

Infineon's AIKW20N60CTXKSA1 is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 2.05V VCE. Ideal for power control applications, it features a built-in diode and operates b/w -40 to 175°C.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

166 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

299 ns

36 ns

2.05 V

FGD3440G2-F085V by Onsemi

FGD3440G2-F085V

Onsemi

Onsemi's FGD3440G2-F085V is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.75V, rise time of 7ns, and power dissipation of 166W. With a max operating temperature of 175 °C, it offers reliable performance in harsh environments.

COLLECTOR

26.9 A

40 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

15 ns

2.2 V

14 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

166 W

7 ns

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

26 ns

7.6 ns

11 ns

3 ns

1.75 V