Loading...

156 W Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NGTB15N120IHLWG by Onsemi

NGTB15N120IHLWG

Onsemi

NGTB15N120IHLWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 20V. It has a nominal turn off time of 440ns, making it suitable for power control applications requiring high voltage handling and fast switching capabilities. The transistor's package style is flange mount with through-hole terminals, ideal for applications where efficient heat dissipation is crucial.

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

156 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

440 ns

NGTB15N120FLWG by Onsemi

NGTB15N120FLWG

Onsemi

NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.

30 A

1200 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

156 W

Insulated Gate BIP Transistors

NO

TIN

NGTB20N120IHSWG by Onsemi

NGTB20N120IHSWG

Onsemi

NGTB20N120IHSWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 156W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.

40 A

1200 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

156 W

Insulated Gate BIP Transistors

NO

TIN

IKB20N60TAATMA1 by Infineon Technologies

IKB20N60TAATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-263AB;

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

156 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

287 ns

35 ns

2.05 V

IKP20N60TAHKSA1 by Infineon Technologies

IKP20N60TAHKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-220AB;

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

156 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

287 ns

35 ns

2.05 V