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1150 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
F3L400R07ME4B23BOSA1 by Infineon Technologies

F3L400R07ME4B23BOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1150 W; Maximum Collector Current (IC): 450 A; Reference Standard: UL APPROVED;

ISOLATED

450 A

650 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

20 V

R-XUFM-X11

2

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1150 W

UL APPROVED

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

758 ns

260 ns

1.95 V

IXYT85N120A4HV by Littelfuse

IXYT85N120A4HV

Littelfuse

Littelfuse IXYT85N120A4HV is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 1.8V, it offers a high collector-emitter voltage of 1200V and can handle up to 300A collector current. Its small outline package and gull wing terminals make it suitable for surface mount designs in power electronics.

COLLECTOR

300 A

1200 V

SINGLE

6.5 V

20 V

TO-268AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1150 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

990 ns

73 ns

1.8 V

IXYH85N120C4 by Littelfuse

IXYH85N120C4

Littelfuse

Littelfuse IXYH85N120C4 is an N-CHANNEL IGBT with 1200V VCEsat, 240A IC, and 1150W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 317ns and high operating temperature range (-55°C to 175°C). Package style is FLANGE MOUNT with RECTANGULAR shape.

COLLECTOR

240 A

1200 V

SINGLE

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1150 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

317 ns

95 ns

2.5 V