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100 W Insulated Gate Bipolar Transistors (IGBT) 7

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IKU06N60RBKMA1 by Infineon Technologies

IKU06N60RBKMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Terminal Form: THROUGH-HOLE;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-251

R-PSIP-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

335 ns

22 ns

IKD06N60R by Infineon Technologies

IKD06N60R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Transistor Application: POWER CONTROL;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

335 ns

22 ns

STGP12NB60HD by STMicroelectronics

STGP12NB60HD

STMicroelectronics

STGP12NB60HD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, a power dissipation of 100W, and fast switching times (ton: 51ns, toff: 295ns). Its robust design ensures reliable performance in demanding environments.

30 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

295 ns

51 ns

STGB7NB40LZT4 by STMicroelectronics

STGB7NB40LZT4

STMicroelectronics

STGB7NB40LZT4 from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 370 V, power dissipation of 100 W, and operates at up to 175 °C. This surface-mount device ensures efficient performance with built-in diode and resistor.

VOLTAGE CLAMPING

COLLECTOR

14 A

370 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.2 V

12 V

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

8000 ns

5400 ns

IKD06N60RFAATMA1 by Infineon Technologies

IKD06N60RFAATMA1

Infineon Technologies

IKD06N60RFAATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.5V and a max collector-emitter voltage of 600V. It is used for power control applications and has a small outline package style, making it suitable for surface mount designs.

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

100 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

149 ns

17 ns

2.5 V

AIHD06N60RATMA1 by Infineon Technologies

AIHD06N60RATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-252;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

100 W

AEC-Q101

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

335 ns

22 ns

2.1 V

AIHD06N60RFATMA1 by Infineon Technologies

AIHD06N60RFATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Minimum Operating Temperature: -40 Cel;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

100 W

AEC-Q101

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

149 ns

17 ns

2.5 V