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930 A Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DF650R17IE4BOSA1 by Infineon Technologies

DF650R17IE4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 930 A; Terminal Form: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

ISOLATED

930 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X10

1

10

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1870 ns

720 ns

FD650R17IE4BOSA2 by Infineon Technologies

FD650R17IE4BOSA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 930 A; Qualification: Not Qualified; Nominal Turn On Time (ton): 720 ns;

ISOLATED

930 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X10

1

10

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1870 ns

720 ns

FF650R17IE4BOSA1 by Infineon Technologies

FF650R17IE4BOSA1

Infineon Technologies

Infineon Technologies' FF650R17IE4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. Ideal for POWER CONTROL applications, it has a max voltage of 1700V, max current of 930A, and operates up to 175°C. With turn on time of 720ns and turn off time of 1870ns, this rectangular package transistor is flange mountable with isolated case connection.

ISOLATED

930 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1870 ns

720 ns

FF650R17IE4DB2BOSA1 by Infineon Technologies

FF650R17IE4DB2BOSA1

Infineon Technologies

Infineon Technologies' FF650R17IE4DB2BOSA1 is a N-CHANNEL IGBT with 2 elements, diode, and thermistor. It offers VCEsat of 2.45V, IC of 930A, and Pmax of 4150W. Ideal for power control applications due to its high voltage rating (1700V) and fast switching times (ton:765ns, toff:1870ns).

ISOLATED

930 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X10

2

10

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

4150 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1870 ns

765 ns

2.45 V

FF650R17IE4VBOSA1 by Infineon Technologies

FF650R17IE4VBOSA1

Infineon Technologies

FF650R17IE4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max Collector-Emitter Voltage of 1700V and can handle a Collector Current of 930A. This RECTANGULAR package is ideal for applications requiring high power switching in industrial settings.

ISOLATED

930 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-PUFM-X10

2

10

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

GENERAL PURPOSE

SILICON

1870 ns

720 ns