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86 A Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGWA50H65DFB2 by STMicroelectronics

STGWA50H65DFB2

STMicroelectronics

STGWA50H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 86A, and Pmax of 272W. Ideal for power control applications due to its fast turn-off time (toff) of 225ns and turn-on time (ton) of 41ns. Package style is flange mount with a max operating temperature of 175°C.

COLLECTOR

86 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

272 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

225 ns

41 ns

2 V

STGWA50HP65FB2 by STMicroelectronics

STGWA50HP65FB2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 272 W; Maximum Collector Current (IC): 86 A; Minimum Operating Temperature: -55 Cel;

COLLECTOR

86 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

272 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

225 ns

2 V

STGB50H65FB2 by STMicroelectronics

STGB50H65FB2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 272 W; Maximum Collector Current (IC): 86 A; Case Connection: COLLECTOR;

COLLECTOR

86 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

272 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

225 ns

41 ns

2 V

STGW50H65DFB2-4 by STMicroelectronics

STGW50H65DFB2-4

STMicroelectronics

STGW50H65DFB2-4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 86A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications in industrial and automotive sectors.

COLLECTOR

86 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

272 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

34 ns

2 V