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7.5 A Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGB3HF60HD by STMicroelectronics

STGB3HF60HD

STMicroelectronics

STGB3HF60HD from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.95V, 600V collector-emitter voltage, and operates at temperatures up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic systems.

COLLECTOR

7.5 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

38 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

140 ns

15 ns

2.95 V

STGF3HF60HD by STMicroelectronics

STGF3HF60HD

STMicroelectronics

STGF3HF60HD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.95V, supports up to 600V collector-emitter voltage, and operates in temperatures from -55 °C to 150 °C. Ideal for high-performance switching tasks, it ensures reliable operation with minimal losses.

ISOLATED

7.5 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

18 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

140 ns

15 ns

2.95 V