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6.2 A Insulated Gate Bipolar Transistors (IGBT) 6

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SGB02N120ATMA1 by Infineon Technologies

SGB02N120ATMA1

Infineon Technologies

SGB02N120ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 6.2A. It has a nominal turn-off time of 375ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.

COLLECTOR

6.2 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SKP02N120XKSA1 by Infineon Technologies

SKP02N120XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 6.2 A; Maximum Collector-Emitter Voltage: 1200 V; JESD-609 Code: e3;

COLLECTOR

6.2 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SGD02N120BUMA1 by Infineon Technologies

SGD02N120BUMA1

Infineon Technologies

Infineon's SGD02N120BUMA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 6.2A max collector current. Ideal for power control applications, it has a turn-off time of 375ns and turn-on time of 40ns. This surface-mount transistor in a rectangular package is designed for high-power operations up to 150°C.

COLLECTOR

6.2 A

1200 V

SINGLE

TO-252AA

R-PSSO-G2

3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SGI02N120XKSA1 by Infineon Technologies

SGI02N120XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6.2 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1200 V;

COLLECTOR

6.2 A

1200 V

SINGLE

TO-262AA

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

375 ns

40 ns

SGP02N120XKSA1 by Infineon Technologies

SGP02N120XKSA1

Infineon Technologies

Infineon's SGP02N120XKSA1 is an N-CHANNEL IGBT with 1200V VCE, 6.2A IC, and 375ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration and SILICON material. Operates at up to 150°C with THROUGH-HOLE terminals in a RECTANGULAR package style.

COLLECTOR

6.2 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SKB02N120ATMA1 by Infineon Technologies

SKB02N120ATMA1

Infineon Technologies

Infineon's SKB02N120ATMA1 is an N-CHANNEL IGBT with a 1200V max collector-emitter voltage and 6.2A max collector current. It has a built-in diode, 375ns turn-off time, and is ideal for power control applications requiring fast switching capabilities in surface-mount designs.

COLLECTOR

6.2 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns