Loading...

54 A Insulated Gate Bipolar Transistors (IGBT) 6

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FP35R12U1T4BPSA1 by Infineon Technologies

FP35R12U1T4BPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Transistor Element Material: SILICON; No. of Elements: 7;

ISOLATED

54 A

1200 V

COMPLEX

R-XUFM-X23

7

23

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

510 ns

43 ns

FP35R12W2T4BOMA1 by Infineon Technologies

FP35R12W2T4BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Package Style (Meter): FLANGE MOUNT; Transistor Application: POWER CONTROL;

ISOLATED

54 A

1200 V

COMPLEX

R-XUFM-X23

7

23

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

510 ns

43 ns

FP35R12W2T4B11BOMA1 by Infineon Technologies

FP35R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Package Body Material: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

ISOLATED

54 A

1200 V

COMPLEX

R-XUFM-X23

7

23

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

510 ns

43 ns

APT30GS60BRDQ2(G) by Microsemi

APT30GS60BRDQ2(G)

Microsemi

Microsemi's APT30GS60BRDQ2(G) is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 54A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 412ns. Package style is flange mount with through-hole terminals.

COLLECTOR

54 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

412 ns

45 ns

FP35R12W2T4PBPSA1 by Infineon Technologies

FP35R12W2T4PBPSA1

Infineon Technologies

Infineon Technologies' FP35R12W2T4PBPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 54A, and max. collector-emitter voltage of 1200V. Ideal for power control applications, it features a nominal turn on time of 43ns and a nominal turn off time of 510ns at a max operating temperature of 175°C.

ISOLATED

54 A

1200 V

COMPLEX

R-XUFM-X23

7

23

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

510 ns

43 ns

FP35R12W2T4PB11BPSA1 by Infineon Technologies

FP35R12W2T4PB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Terminal Form: UNSPECIFIED; Maximum Operating Temperature: 150 Cel;

ISOLATED

54 A

1200 V

COMPLEX

R-XUFM-X35

7

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

510 ns

43 ns