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450 A Insulated Gate Bipolar Transistors (IGBT) 15

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS300R12KE4BOSA1 by Infineon Technologies

FS300R12KE4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; No. of Terminals: 29; Package Shape: RECTANGULAR;

ISOLATED

450 A

1200 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X29

6

29

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

720 ns

240 ns

FS300R17OE4BOSA1 by Infineon Technologies

FS300R17OE4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1850 W; Maximum Collector Current (IC): 450 A; Minimum Operating Temperature: -40 Cel;

ISOLATED

450 A

1700 V

3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X29

6

29

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1850 W

UL APPROVED

YES

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

910 ns

385 ns

2.3 V

FF300R12ME4BOSA1 by Infineon Technologies

FF300R12ME4BOSA1

Infineon Technologies

FF300R12ME4BOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 450A, and turn off time of 720ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.

ISOLATED

450 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

720 ns

240 ns

FF300R12KT4HOSA1 by Infineon Technologies

FF300R12KT4HOSA1

Infineon Technologies

FF300R12KT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a max current of 450A. It has a nominal turn-off time of 720ns and turn-on time of 230ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.

ISOLATED

450 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

720 ns

230 ns

F3L300R12ME4B22BOSA1 by Infineon Technologies

F3L300R12ME4B22BOSA1

Infineon Technologies

F3L300R12ME4B22BOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, current of 450A, and turn off time of 650ns. Ideal for POWER CONTROL applications due to its built-in diode and thermistor features.

ISOLATED

450 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

650 ns

290 ns

F3L300R12ME4B23BOSA1 by Infineon Technologies

F3L300R12ME4B23BOSA1

Infineon Technologies

F3L300R12ME4B23BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 450A. This IGBT is designed for power control applications with UL approval.

ISOLATED

450 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

960 ns

290 ns

F3L300R12MT4B22BOSA1 by Infineon Technologies

F3L300R12MT4B22BOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 270 ns;

ISOLATED

450 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

600 ns

270 ns

F3L300R12MT4B23BOSA1 by Infineon Technologies

F3L300R12MT4B23BOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Package Body Material: UNSPECIFIED; Case Connection: ISOLATED;

ISOLATED

450 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

590 ns

280 ns

F3L400R07ME4B22BOSA1 by Infineon Technologies

F3L400R07ME4B22BOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Package Body Material: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

ISOLATED

450 A

650 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

780 ns

255 ns

F3L400R07ME4B23BOSA1 by Infineon Technologies

F3L400R07ME4B23BOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1150 W; Maximum Collector Current (IC): 450 A; Reference Standard: UL APPROVED;

ISOLATED

450 A

650 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

20 V

R-XUFM-X11

2

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1150 W

UL APPROVED

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

758 ns

260 ns

1.95 V

MG12300D-BA1MM by Littelfuse

MG12300D-BA1MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 450 A; No. of Elements: 2; Maximum Collector-Emitter Voltage: 1200 V;

ISOLATED

450 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

7 V

20 V

R-XUFM-X7

2

7

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

605 ns

280 ns

F3L300R12MT4PB22BPSA1 by Infineon Technologies

F3L300R12MT4PB22BPSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

ISOLATED

450 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

600 ns

270 ns

F3L300R12MT4PB23BPSA1 by Infineon Technologies

F3L300R12MT4PB23BPSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Case Connection: ISOLATED; Transistor Application: POWER CONTROL;

ISOLATED

450 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

590 ns

280 ns

FF450R33T3E3B5BPSA1 by Infineon Technologies

FF450R33T3E3B5BPSA1

Infineon Technologies

FF450R33T3E3B5BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.75V and can handle a Max Collector Current of 450A. Ideal for POWER CONTROL applications, this IGBT operates b/w -40 to 150°C, with a Max Collector-Emitter Voltage of 3300V.

ISOLATED

450 A

3300 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

6.4 V

20 V

R-PUFM-X10

1

2

10

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

2190 ns

710 ns

2.75 V

FF450R33T3E3BPSA1 by Infineon Technologies

FF450R33T3E3BPSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Package Shape: RECTANGULAR; Maximum VCEsat: 2.75 V;

ISOLATED

450 A

3300 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

6.4 V

20 V

R-PUFM-X10

2

10

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2190 ns

710 ns

2.75 V