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41 A Insulated Gate Bipolar Transistors (IGBT) 8

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SIGC25T60SNCX1SA2 by Infineon Technologies

SIGC25T60SNCX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 41 A; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

41 A

600 V

SINGLE

R-XUUC-N3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

391 ns

78 ns

SKW30N60FKSA1 by Infineon Technologies

SKW30N60FKSA1

Infineon Technologies

SKW30N60FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 41A IC, and 78ns ton. Ideal for POWER CONTROL applications due to its single configuration with built-in diode. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance up to 150°C.

LOW CONDUCTION LOSS

COLLECTOR

41 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

391 ns

78 ns

SKW30N60HSFKSA1 by Infineon Technologies

SKW30N60HSFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 41 A; Case Connection: COLLECTOR; Transistor Element Material: SILICON;

COLLECTOR

41 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

301 ns

39 ns

SGB30N60ATMA1 by Infineon Technologies

SGB30N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 41 A; Maximum Collector-Emitter Voltage: 600 V; JESD-30 Code: R-PSSO-G2;

LOW CONDUCTION LOSS

COLLECTOR

41 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

391 ns

78 ns

SGW30N60FKSA1 by Infineon Technologies

SGW30N60FKSA1

Infineon Technologies

SGW30N60FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 41A. It has a nominal turn-off time of 391ns and a turn-on time of 78ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and operates at temperatures up to 150°C.

LOW CONDUCTION LOSS

COLLECTOR

41 A

600 V

SINGLE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

391 ns

78 ns

SGP30N60HSXKSA1 by Infineon Technologies

SGP30N60HSXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 41 A; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;

COLLECTOR

41 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

301 ns

39 ns

SGW30N60HSFKSA1 by Infineon Technologies

SGW30N60HSFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 41 A; JESD-30 Code: R-PSFM-T3; Qualification: Not Qualified;

COLLECTOR

41 A

600 V

SINGLE

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

301 ns

39 ns

FGB3040G2-F085 by Onsemi

FGB3040G2-F085

Onsemi

FGB3040G2-F085 by Onsemi is an N-CHANNEL IGBT with 7000 ns rise time, 15000 ns fall time, and 150 W power dissipation. Ideal for applications requiring a max collector-emitter voltage of 390 V, such as power electronics and motor control systems.

41 A

390 V

15000 ns

2.2 V

12 V

e3

1

175 Cel

260

N-CHANNEL

150 W

7000 ns

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

30