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409 A Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH400N100H4Q2F2PG by Onsemi

NXH400N100H4Q2F2PG

Onsemi

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 959 W; Maximum Collector Current (IC): 409 A; Maximum Gate-Emitter Threshold Voltage: 6.1 V;

ISOLATED

409 A

1000 V

COMPLEX

6.1 V

20 V

R-XUFM-X42

4

42

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

959 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

619 ns

186 ns

2.3 V

NXH400N100H4Q2F2SG by Onsemi

NXH400N100H4Q2F2SG

Onsemi

NXH400N100H4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 1000V VCEsat, 959W power dissipation, and 409A collector current. Ideal for POWER CONTROL applications due to its fast turn-off time of 619ns and high operating temperature range (-40 °C to 175°C).

ISOLATED

409 A

1000 V

COMPLEX

6.1 V

20 V

R-XUFM-X42

4

42

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

959 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

619 ns

186 ns

2.3 V

NXH400N100H4Q2F2SG-R by Onsemi

NXH400N100H4Q2F2SG-R

Onsemi

NXH400N100H4Q2F2SG-R by Onsemi is an N-CHANNEL IGBT with 4 elements, VCEsat of 2.3V, and IC of 409A. Ideal for POWER CONTROL applications, it has a toff of 619ns and ton of 186ns. Operating temperature ranges from -40 °C to 175°C.

ISOLATED

409 A

1000 V

COMPLEX

6.1 V

20 V

R-XUFM-X42

4

42

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

959 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

619 ns

186 ns

2.3 V