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309 A Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH800A100L4Q2F2S1G by Onsemi

NXH800A100L4Q2F2S1G

Onsemi

NXH800A100L4Q2F2S1G by Onsemi is an N-CHANNEL IGBT with 1000V VCEsat, 309A IC, and 714W power dissipation. Ideal for POWER CONTROL applications due to its high voltage handling capacity and low saturation voltage. Suitable for complex configurations requiring precise control in industrial settings.

ISOLATED

309 A

1000 V

COMPLEX

6.7 V

20 V

R-XUFM-P17

4

17

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

714 W

NO

PIN/PEG

UPPER

POWER CONTROL

SILICON

1121.94 ns

223.8 ns

2.3 V

NXH800A100L4Q2F2S2G by Onsemi

NXH800A100L4Q2F2S2G

Onsemi

NXH800A100L4Q2F2S2G by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.3V, Max Collector-Emitter Voltage of 1000V, and Max Collector Current of 309A. This COMPLEX transistor has a Nominal Turn Off Time of 1121.94ns and operates b/w -40 to 175 °C temperature range.

ISOLATED

309 A

1000 V

COMPLEX

6.7 V

20 V

R-XUFM-P17

4

17

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

714 W

NO

PIN/PEG

UPPER

POWER CONTROL

SILICON

1121.94 ns

223.8 ns

2.3 V