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300 A Insulated Gate Bipolar Transistors (IGBT) 6

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSM150GB170DLCHOSA1 by Infineon Technologies

BSM150GB170DLCHOSA1

Infineon Technologies

Infineon's BSM150GB170DLCHOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and 930 ns turn off time. It operates at max 1700V and 300A, suitable for high-power applications like industrial motor drives due to its fast switching speed and high collector current capacity.

ISOLATED

300 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

930 ns

200 ns

DF200R12PT4B6BOSA1 by Infineon Technologies

DF200R12PT4B6BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 1100 W; Maximum Collector Current (IC): 300 A; Transistor Application: POWER CONTROL;

ISOLATED

300 A

1200 V

COMPLEX

6.4 V

20 V

R-XUFM-X20

3

20

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1100 W

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

407 ns

225 ns

2.1 V

MG06200S-BN4MM by Littelfuse

MG06200S-BN4MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Terminal Form: UNSPECIFIED;

ISOLATED

300 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

6.5 V

20 V

R-XUFM-X7

2

7

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

440 ns

200 ns

MG12200D-BA1MM by Littelfuse

MG12200D-BA1MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Package Shape: RECTANGULAR; Transistor Application: POWER CONTROL;

ISOLATED

300 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

7 V

20 V

R-XUFM-X7

2

7

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

565 ns

195 ns

BSM150GB120DLCHOSA1 by Infineon Technologies

BSM150GB120DLCHOSA1

Infineon Technologies

Infineon's BSM150GB120DLCHOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, 1200V max. collector-emitter voltage, and 300A max. collector current. It features a fast turn-off time of 650ns and turn-on time of 190ns, making it ideal for high-power applications like motor drives and inverters.

ISOLATED

300 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

650 ns

190 ns

IXYT85N120A4HV by Littelfuse

IXYT85N120A4HV

Littelfuse

Littelfuse IXYT85N120A4HV is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 1.8V, it offers a high collector-emitter voltage of 1200V and can handle up to 300A collector current. Its small outline package and gull wing terminals make it suitable for surface mount designs in power electronics.

COLLECTOR

300 A

1200 V

SINGLE

6.5 V

20 V

TO-268AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1150 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

990 ns

73 ns

1.8 V