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280 A Insulated Gate Bipolar Transistors (IGBT) 8

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS200R12KT4RBOSA1 by Infineon Technologies

FS200R12KT4RBOSA1

Infineon Technologies

Infineon's FS200R12KT4RBOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and operating temperature up to 175°C.

ISOLATED

280 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X35

6

35

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

600 ns

190 ns

FS200R12PT4BOSA1 by Infineon Technologies

FS200R12PT4BOSA1

Infineon Technologies

FS200R12PT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements and built-in diode and thermistor. It is used for power control applications, with a max collector-emitter voltage of 1200V and a max collector current of 280A.

ISOLATED

280 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X20

6

20

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

600 ns

190 ns

FS200R12KT4RB11BOSA1 by Infineon Technologies

FS200R12KT4RB11BOSA1

Infineon Technologies

Infineon's FS200R12KT4RB11BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and max current of 280A for power control applications. UL approved, it features a turn off time of 600ns and turn on time of 190ns in a flange mount package.

ISOLATED

280 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X35

6

35

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

600 ns

190 ns

FS200R12KT4RPBPSA1 by Infineon Technologies

FS200R12KT4RPBPSA1

Infineon Technologies

Infineon's FS200R12KT4RPBPSA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and silicon material composition.

ISOLATED

280 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X35

6

35

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

600 ns

190 ns

FS200R12PT4PBOSA1 by Infineon Technologies

FS200R12PT4PBOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 280 A; Transistor Element Material: SILICON; Case Connection: ISOLATED;

ISOLATED

280 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X20

6

20

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

600 ns

190 ns

IFS200B12N3E4B31BPSA1 by Infineon Technologies

IFS200B12N3E4B31BPSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 280 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON;

ISOLATED

280 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

R-XUFM-X41

6

41

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

528 ns

185 ns

NXH450N65L4Q2F2SG by Onsemi

NXH450N65L4Q2F2SG

Onsemi

NXH450N65L4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 280A IC, and 633W power dissipation. Ideal for power control applications due to its series connected configuration with built-in diode and thermistor. Operating temperature ranges from -40 °C to 125°C making it suitable for various industrial uses.

ISOLATED

280 A

650 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

5.2 V

20 V

R-XUFM-X40

2

40

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

633 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

978 ns

192 ns

2.2 V

NXH450N65L4Q2F2PG by Onsemi

NXH450N65L4Q2F2PG

Onsemi

NXH450N65L4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.2V and can handle a collector current of up to 280A. Ideal for power control applications due to its high power dissipation capability of 633W and operating temperature range from -40 °C to 125°C.

ISOLATED

280 A

650 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

5.2 V

20 V

R-XUFM-X36

2

36

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

633 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

978 ns

192 ns

2.2 V